Phase change memory: PCM is a non-volatile memory type in which data is stored when the structure of the PCM material is modified between amorphous and crystalline states, resulting in a change in the resistivity of the material. Some of the biggest challenges in working with these materials include the requirement for ternary alloys of semiconducting metal chalcogenides, such as Ge ₂ Sb ₂ Te ₃ (GST). During the ADEPT programme, we will be building on our previous demonstration of depositing device-quality GST, in addition to using the expertise held within the research team, and the Ìì·¢ÓéÀÖÆåÅÆ_Ìì·¢ÓéÀÖAPP-¹ÙÍø|ÏÂÔØ Nanofabrication Centre to drive forward the development of novel phase change memory devices at the nanoscale.

ADEPT goal: a switchable array based upon sum 10 nm GST cells with competitive switching energy and cyclability